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ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 1 of 1 7 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com 3 pin sot - 89 package ordering information part no. description ah128 - 89g ? w high linearity ingap hbt amplifier standard t/r size = 1000 pieces on a 7 reel product description the ah128 is a high dynamic range driver amplifier in a low - cost surface mount package. the ingap/gaas hbt is able to achieve high performance across a broad range with +40 dbm oip3 and +25 dbm of compressed 1db power while drawing 115 ma c urrent. the ah128 is available in a lead - free/green/rohs - compliant sot - 89 package. all devices are 100% rf and dc tested. the ah128 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high effic iency are required. internal biasing allows the ah128 to maintain high linearity over temperature and operate directly off a single +5v supply. this combination makes the device an excellent candidate for transceiver line cards in current and next genera tion multi - carrier 3g base stations. applications ? ? ? ? product features ? C 3500?mhz ? +25?dbm p1db ? +40?dbm output ip3 ? 16.9 db gain at 2140?mhz ? 115?ma current draw ? +5?v single supply ? ? functional block diagram pin configuration pin no. label 1 rf in 3 rf out?/?v cc 2 gnd backside paddle gnd a h 1 2 8 - 8 9 g r f i n g n d r f o u t / v c c 1 2 3 b a c k s i d e p a d d l e - g n d
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 2 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com absolute maximum ratings parameter rating storage temperature ?65 to 150c cw, 50, t=25 c input p 10 db device voltage +6 v operation of this device outside the parameter ranges given above may cause permanent damage. recommended operating conditions parameter min typ max units case temperature ? device voltage (v cc ) +3.0 +5.0 +5.25 v tj for >10 6 hours mttf + 200 c electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: v supply =+5 v, i cq =115 ma (typ.), temp= +25c, tuned application circuit parameter conditions? (1) min typ max units operational frequency range 60 3500 mhz test frequency 2140 mhz gain 14.5 16.9 18 db input return loss 15 db output return loss 11 db w - cdma channel power (2) ?50 dbc aclr +15 dbm output p1db +25 dbm output ip3 pout=+10?dbm?/?tone, ?f=1?mhz +36 +40 dbm noise figure 4.6 db quiescent collector current 95 115 130 ma thermal resistance, jc junction to case 116 c/w typical performance test conditions unless otherwise noted: v supply =+5 v, i cq =150 ma (typ.), temp= +25c, tuned application circuit parameter conditions? (1) typical units frequency 920 1960 2140 mhz gain 19.7 17.6 16.9 db input return loss 12 15 15 db output return loss 8.2 11 11 db w - cdma channel power ?50 dbc aclr , note 2 +15 +15.5 +15 dbm output p1db +24.7 +25.5 +25 dbm output ip3 ?f=1?mhz , note 3 +40 +40 +40 dbm noise figure 4.6 4.6 4.6 db notes: 1. test conditions unless otherwise noted: v cc =+5?v, temp=+25?c, 50? system. 2. w - cdma 3gpp test model 1+64 dpch, par = 10.3 db @ 0.01% probability, 3.84 mhz bw 3. p out = +13 dbm/tone for 9 2 0 mhz, +11 dbm/tone for 1960 mhz and +10 dbm/tone for 2140 mhz.
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 3 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com device characterization data note: the gain for the unmatched device in 50 ohm system is shown as the trace in black color. for a tuned circuit for a pa rticular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gain is shown in the red line. s - parameters freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 - 5.38 - 173.57 22.87 166.30 - 30.49 4.94 - 12.66 - 146.31 100 - 4.89 - 176.21 21.96 165.00 - 30.37 2.12 - 11.24 - 162.50 300 - 4.91 - 175.57 21.84 151.04 - 30.66 - 0.34 - 11.69 - 161.87 500 - 3.95 - 175.05 21.01 130.39 - 30.54 1.26 - 9.18 - 156.72 700 - 3.10 - 179.25 19.51 114.04 - 30.06 - 1.57 - 7.38 - 162.95 900 - 2.51 175.19 18.02 102.07 - 29.47 - 3.23 - 6.59 - 171.09 1100 - 2.25 170.64 16.77 92.59 - 29.27 - 7.07 - 6.09 - 178.21 1300 - 2.12 165.24 15.56 84.05 - 29.04 - 9.77 - 5.69 175.48 1500 - 2.01 160.47 14.47 76.48 - 28.75 - 12.83 - 5.57 170.50 1700 - 2.01 156.16 13.46 69.77 - 28.78 - 16.94 - 5.59 165.41 1900 - 1.92 150.48 12.74 63.07 - 28.52 - 20.19 - 5.46 159.78 2100 - 1.84 145.43 11.87 56.47 - 28.43 - 24.12 - 5.36 154.06 2300 - 1.76 141.16 11.08 50.21 - 28.64 - 26.71 - 5.26 150.23 2500 - 1.73 137.11 10.51 45.46 - 28.47 - 29.12 - 5.54 146.96 2700 - 1.69 131.81 10.11 39.00 - 28.22 - 33.92 - 5.63 140.38 2900 - 1.74 127.64 9.60 33.91 - 27.96 - 37.08 - 5.41 135.33 3100 - 1.83 121.13 9.17 27.49 - 28.09 - 40.84 - 5.37 131.92 3300 - 1.90 115.79 8.52 22.19 - 28.02 - 43.96 - 5.63 129.40 3500 - 1.90 112.40 8.12 16.48 - 28.00 - 46.34 - 5.73 121.96 notes: 1. test conditions: v cc = +5 v, i c q = 115 ma, 25 ? c, unmatched 50 ohm system, calibrated to device leads
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 4 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com performance plots - 700 ? C ? 800 mhz reference design test conditions unless otherwise noted: v cc =+5 ?v, i cq = 115 ? ma, temp=+25?c, 50? system 02.16 - 2004 o - fdma, 64qam - 1/2, 1024 - fft, 20 symbols and 30 subchannels, 5 mhz carrier bw 700 ? C ? 800 mhz reference design typical o - fdma performance at 25?c notes: 1. the primary rf microstrip line is 50 ? . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 ? jumpers can be replaced with copper trace in target application. 4. the edge of r1 is placed 105 mils from the ah128 rfin pin. (4.4 o at 750 mhz) 5. the edge of l2 is placed 40 mils fro m the edge of r1. (1.7 o at 750 mhz) 6. the edge of l3 is placed 135 mils from the ah128 rfout pin. (5.6 o at 750 mhz) 7. the edge of c9 is placed 75 mils from the edge of l3. (3.1 o at 750 mhz) frequency (mhz) 700 750 800 units gain 20.9 20.7 20.4 db input return loss 15.7 19.6 16 db output return loss 8.9 7.6 6.6 db evm (pout=+16 dbm) 1.8 1.6 1.5 % output p1db +24.3 +24.4 +24.6 dbm output ip3 (pout=+15 dbm/tone, f= 1mhz) +38.5 +39.7 +40.2 dbm gain vs. frequency t=25c 17 18 19 20 21 22 700 720 740 760 780 800 frequency (mhz) gain (db) return loss t=25c -30 -25 -20 -15 -10 -5 0 700 720 740 760 780 800 frequency (ghz) s11, s22 (db) s11 s22 0 1 2 3 4 5 8 10 12 14 16 18 evm (%) output power (dbm) evm vs. output average power vs. frequency t=25 c 700 mhz 750 mhz 800 mhz 802.16 - 2004 o - fdma, 64qam - 1/2, 1024 - fft, 20 symbols and 30 subchannels, 5 mhz carrier bw current vs output average power vs. frequency t=25c 80 100 120 140 160 180 14 15 16 17 18 19 output power (dbm) collector current (ma) 700 mhz 750 mhz 800 mhz 802.16-2004 o-fdma, 64qam-1/2, 1024-fft, 20 symbols and 30 subchannels, 5 mhz carrier bw aclr vs. output average power vs. frequency t=25c -60 -55 -50 -45 -40 -35 10 12 14 16 18 20 output power (dbm) aclr (dbc) 700 mhz 750 mhz 800 mhz w-cdma 3gpp test model 1+64 dpch par = 9.7 db @ 0.01% probability 3.84 mhz bw oip3 vs. output power/tone vs. frequency t=25c 30 35 40 45 50 8 10 12 14 16 18 output power/tone (dbm) oip3 (dbm) 700 mhz 750 mhz 800 mhz c3 c4 c2 l3 r 4 l 1 r1 c1 c 9 c 1 0 c8 c9 c10 l2 r2
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 5 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com performance plots - 869 ? C ? 960 ?mhz reference design test conditions unless otherwise noted: v cc =+5?v, i cq = 115 ? ma , temp=+25?c, 50? system. w - cdma 3gpp test model 1+64 dpch, par = 10.3 db @ 0.01% probability, 3.84 mhz bw 869? C 96 0 mhz reference design typical w - c dma performance at 25?c notes: 1. the primary rf microstrip line is 50 ? . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 ? jumpers can be replaced with copper trace in target application. 4. the edge of r2 is placed at 285 mils from ah128 rfout pin. (14 o at 920 mhz ) 5. the edge of c9 is placed against the edge of r2 . 6. the edge of r1 is placed at 100 mils from ah128 rfin pin. (5 o at 920 mhz) 7. the edge of c10 is placed 260 mils from the edge of r1. (13 o at 920 mhz) frequency (mhz) 869 920 960 units gain 19.8 19.7 19.6 db input return loss 10 12 13 db output return loss 8.8 8.2 7.9 db aclr (pout=+1 5 dbm) - 49 - 50 - 50 % output p1db +24.4 +24.7 +24.6 dbm output ip3 (pout=+1 3 dbm/tone, f= 1mhz) +39 +40 +41 dbm noise figure 4.7 4.6 4.6 db 18 19 20 21 22 0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98 gain (db) frequency (ghz) gain vs. frequency +85 c +25 c - 40 c - 25 - 20 - 15 - 10 - 5 0 0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98 s11 (db) frequency (ghz) return loss +85 c +25 c - 40 c - 25 - 20 - 15 - 10 - 5 0 0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98 s22 (db) frequency (ghz) return loss +85 c +25 c - 40 c 18 19 20 21 22 - 40 - 15 10 35 60 85 gain (db) tempurature ( c) gain vs. temperature vs frequency 869 mhz 920 mhz 960 mhz 100 110 120 130 140 150 160 12 14 16 18 20 22 24 collector current (ma) output power (dbm) current vs output average power vs. frequency t=25 c 869 mhz 920 mhz 960 mhz 22 23 24 25 26 27 28 0.86 0.88 0.90 0.92 0.94 0.96 p1db (dbm) frequency (ghz) p1db vs. frequency vs. temperature +85 c +25 c - 40 c c 3 c 4 c 2 r 2 r 4 l 1 r 1 c 1 c 9 c 1 0
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 6 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com performance plots - 869 ? C ? 960 ?mhz reference design (cont d ) test conditions unless otherwise noted: v cc =+5?v, i cq = 115 ? ma , temp=+25?c, 50? system 19 20 21 22 23 24 25 0 1 2 3 4 5 6 output power (dbm) input power (dbm) output average power vs input average power t=25 c 869 mhz 920 mhz 960 mhz - 65 - 60 - 55 - 50 - 45 - 40 10 12 14 16 18 aclr (dbc) output power (dbm) aclr vs. output average power vs. frequency t=25 c 869 mhz 920 mhz 960 mhz w - cdma 3gpp test model 1+64 dpch par = 10.3 db @ 0.01% probability 3.84 mhz bw - 65 - 60 - 55 - 50 - 45 - 40 10 12 14 16 18 aclr (dbc) output power (dbm) aclr vs. output average power vs. temperature f=920 mhz +85 c +25 c - 40 c w - cdma 3gpp test model 1+64 dpch par = 10.3 db @ 0.01% probability 3.84 mhz bw 0 1 2 3 4 5 6 7 8 0.86 0.88 0.90 0.92 0.94 0.96 nf (db) frequency (ghz) noise figure vs. frequency vs. temperature +85 c +25 c - 40 c 25 30 35 40 45 8 9 10 11 12 13 14 15 16 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone vs. temperature f=920 mhz, 1 mhz spacing +85 c +25 c - 40 c 25 30 35 40 45 8 9 10 11 12 13 14 15 16 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone vs. frequency t=25 c, 1 mhz spacing 869 mhz 920 mhz 960 mhz 25 30 35 40 45 0.86 0.88 0.90 0.92 0.94 0.96 oip3 (dbm) frequency (ghz) oip3 vs. frequency t=25 c, 1 mhz spacing, 14 dbm/tone
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 7 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com 1805? C ?1 8 8 0 mhz reference design typical w - c dma performance at 25?c notes: 1. the primary rf microstrip line is 50 ? . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 ? jumpers can be replaced with copper trace in target application. 4. the edge of c9 is placed at 310 mils from ah128 rfout pin. (48.8 o at 1842 mhz) 5. the edge of r1 is placed at 100 mils from ah128 rfin pin. (15.7 o at 1842 mhz ) 6. the edge of c10 is placed 150 mils from the edge of r1. (23.6 o at 1842 mhz ) frequency (mhz) 1805 1842 1880 units gain 18.1 18.1 18.0 db input return loss 13.3 14.5 13.5 db output return loss 10.6 11.1 11.6 db aclr (pout=+15 dbm) - 48.5 - 48.1 - 48.2 % output p1db +24.7 +24.8 +24.7 dbm output ip3 (pout=+1 3 dbm/tone, f= 1mhz) +39.2 +39.0 +39.8 dbm performance plots - 1805 ? C ? 1880? mhz reference design test conditions unless otherwise noted: v cc =+5?v, i cq = 115 ? ma , temp=+25?c, 50? system w - cdma 3gpp test model 1+64 dpch, par = 10.3 db @ 0.01% probability, 3.84 mhz bw 13 14 15 16 17 18 19 1.7 1.75 1.8 1.85 1.9 1.95 2 gain (db) frequency (ghz) gain vs. frequency t=25 o c 34 36 38 40 42 5 7 9 11 13 15 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone t=25 c, 1mhz tone spacing 1805 mhz 1842 mhz 1880 mhz - 20 - 15 - 10 - 5 0 1.7 1.75 1.8 1.85 1.9 1.95 2 return loss (db) frequency (ghz) return loss vs. frequency t=25 o c s11 s22 - 60 - 55 - 50 - 45 - 40 - 35 10 11 12 13 14 15 16 17 18 aclr (dbc) output power (dbm) aclr vs. output power t=25 c 1805 mhz 1842 mhz 1880 mhz w - cdma, tm 1+64dpch, par=10.2db @ 0.01% probability, 3.84 mhz bw 2.0 pf 3.9 pf 1.5 pf w = 31 mil l = 1 50 mil w = 31 mil l = 310 mil
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 8 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com 1930? C ?1990 mhz reference design typical w - c dma performance at 25?c notes: 1. the primary rf microstrip line is 50 ? . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 ? jumpers can be replaced with copper trace in target application. 4. the edge of c9 is placed at 265 mils from ah1 28 rfout pin. (29 o at 1960 mhz) 5. the edge of r2 is placed against the edge of c9 . 6. the edge of r1 is placed at 100 mils from ah128 rfin pin. (11 o at 1960 mhz) 7. the edge of c10 is placed 220 mils from the edge of r1. (24 o at 1960 mhz) frequency (mhz) 1930 1960 1990 units gain 17.6 17.6 17.5 db input return loss 14 15 14 db output return loss 11 11 11 db aclr (pout=+15 dbm) - 50 - 50 - 50 % output p1db +25.5 +25.5 +25.5 dbm output ip3 (pout=+1 1 dbm/tone, f= 1mhz) +39.5 +40 +40 dbm noise figure 4.4 4.6 5.0 db performance plots - 1930? C ?1990 ?mhz reference design test conditions unless otherwise noted: v cc =+5?v, i cq = 115 ? ma , temp=+25?c, 50? system w - cdma 3gpp test model 1+64 dpch, par = 10.3 db @ 0.01% probability, 3.84 mhz bw c 3 c 4 c 2 r 2 r 4 l 1 r 1 c 1 c 9 c 1 0 15 16 17 18 19 1.92 1.94 1.96 1.98 2.00 gain (db) frequency (ghz) gain vs. bias voltage t=25 c 4.75v 5v 5.25v - 25 - 20 - 15 - 10 - 5 0 1.92 1.94 1.96 1.98 2.00 s11 (db) frequency (ghz) s11 vs bias voltage t=25 c 4.75v 5v 5.25v - 25 - 20 - 15 - 10 - 5 0 1.92 1.94 1.96 1.98 2.00 s11 (db) frequency (ghz) s22 vs bias voltage t=25 c 4.75v 5v 5.25v 15 16 17 18 19 20 21 22 23 24 25 26 gain (db) output power ( dbm ) gain vs. output average power f=1960 mhz 100 110 120 130 140 150 160 12 14 16 18 20 22 24 collector current (ma) output power (dbm) current vs output average power vs. frequency t=25 c 1930 mhz 1960 mhz 1990 mhz 22 23 24 25 26 27 28 1.93 1.94 1.95 1.96 1.97 1.98 1.99 p1db (dbm) frequency (ghz) p1db vs. frequency t=25 c
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 9 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com performance plots - 1930 ? C ? 1990 ?mhz reference design (cont d ) test conditions unless otherwise noted: v cc =+5?v, i cq = 115 ? ma , temp=+25?c, 50? system 20 21 22 23 24 25 26 2 3 4 5 6 7 8 output power (dbm) input power (dbm) output average power vs input average power t=25 c 1930 mhz 1960 mhz 1990 mhz - 65 - 60 - 55 - 50 - 45 - 40 10 12 14 16 18 aclr (dbc) output power (dbm) aclr vs. output average power vs. frequency t=25 c 1930 mhz 1960 mhz 1990 mhz w - cdma 3gpp test model 1+64 dpch par = 10.3 db @ 0.01% probability 3.84 mhz bw 25 30 35 40 45 8 9 10 11 12 13 14 15 16 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone vs. frequency t=25 c, 1 mhz spacing 1930 mhz 1960 mhz 1990 mhz 25 30 35 40 45 1.93 1.94 1.95 1.96 1.97 1.98 1.99 oip3 (dbm) frequency (ghz) oip3 vs. frequency t=25 c, 1 mhz spacing, 11 dbm/tone 100 110 120 130 140 150 160 12 14 16 18 20 22 24 collector current (ma) output power (dbm) current vs output average power vs. bias voltage t=25 c, f=1960 mhz 4.75 v 5v 5.25v 22 23 24 25 26 27 28 1.93 1.94 1.95 1.96 1.97 1.98 1.99 p1db (dbm) frequency (ghz) p1db vs. frequency vs bias voltage t=25 c 4.75v 5v 5.25v 25 30 35 40 45 8 9 10 11 12 13 14 15 16 oip3 (dbm) output power/tone (dbm) oip3 vs. output average power vs. bias voltage t=25 c, 1 mhz spacing, f=1960 mhz 4.75v 5v 5.25v 0 1 2 3 4 5 6 7 8 4.75 4.85 4.95 5.05 5.15 5.25 nf (db) voltage (v) noise figure vs. bias voltage t=25 c, f=1960 mhz
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 10 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com 2110? C ?2170 mhz reference design typical w - c dma performance at 25?c notes: 1. the primary rf microstrip line is 50 ? . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 ? jumpers can be replaced with copper trace in target application. 4. the edge of c9 is placed at 250 mils from ah128 rfout pin. (29.6 o at 2140 mhz) 5. the edge of r1 is placed at 100 mils from ah128 rfin pin. (12 o at 2140 mhz) 6. the edge of c10 is placed 180 mils from the edge of r1. (21.3 o at 2140 mhz) frequency (mhz) 2110 2140 2170 units gain 16.9 16.9 16.7 db input return loss 15 15 14 db output return loss 12 11 11 db aclr (pout=+15 dbm) - 49 - 50 - 49 % output p1db +24.8 +25 +25 dbm output ip3 (pout=+1 0 dbm/tone, f= 1mhz) +40 +40 +39 dbm noise figure 4.6 4.6 4.7 db performance plots - 2110? C ?2170 ?mhz reference design test conditions unless otherwise noted: v cc =+5?v, i cq = 115 ? ma , temp=+25?c, 50? system w - cdma 3gpp test model 1+64 dpch, par = 10.3 db @ 0.01% probability, 3.84 mhz bw 14 15 16 17 18 2.10 2.12 2.14 2.16 2.18 2.20 gain (db) frequency (ghz) gain vs. frequency +85 c +25 c - 40 c - 25 - 20 - 15 - 10 - 5 0 2.10 2.12 2.14 2.16 2.18 2.20 s11 (db) frequency (ghz) return loss +85 c +25 c - 40 c - 25 - 20 - 15 - 10 - 5 0 2.10 2.12 2.14 2.16 2.18 2.20 s22 (db) frequency (ghz) return loss +85 c +25 c - 40 c 14 15 16 17 18 - 40 - 15 10 35 60 85 gain (db) tempurature ( c) gain vs. temperature vs frequency 2110 mhz 2140 mhz 2170 mhz 100 110 120 130 140 150 160 12 14 16 18 20 22 24 collector current (ma) output power (dbm) current vs output average power vs. frequency t=25 c 2110 mhz 2140 mhz 2170 mhz 22 23 24 25 26 27 28 2.11 2.12 2.13 2.14 2.15 2.16 2.17 p1db (dbm) frequency (ghz) p1db vs. frequency vs. temperature +85 c +25 c - 40 c
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 11 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com performance plots - 2110 ? C ? 2170 ?mhz reference design (cont d ) test conditions unless otherwise noted: v cc =+5?v, i cq = 115 ? ma , temp=+25?c, 50? system 19 20 21 22 23 24 25 3 4 5 6 7 8 9 output power (dbm) input power (dbm) output average power vs input average power t=25 c 2110 mhz 2140 mhz 2170 mhz - 65 - 60 - 55 - 50 - 45 - 40 10 12 14 16 18 aclr (dbc) output power (dbm) aclr vs. output average power vs. frequency t=25 c 2110 mhz 2140 mhz 2170 mhz w - cdma 3gpp test model 1+64 dpch par = 10.3 db @ 0.01% probability 3.84 mhz bw - 65 - 60 - 55 - 50 - 45 - 40 10 12 14 16 18 aclr (dbc) output power (dbm) aclr vs. output average power vs. temperature f=2140 ghz +85 c +25 c - 40 c w - cdma 3gpp test model 1+64 dpch par = 10.3 db @ 0.01% probability 3.84 mhz bw 0 1 2 3 4 5 6 7 8 2.10 2.12 2.14 2.16 2.18 2.20 nf (db) frequency (ghz) noise figure vs. frequency vs. temperature +85 c +25 c - 40 c 25 30 35 40 45 8 9 10 11 12 13 14 15 16 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone vs. temperature f=2140 ghz, 1 mhz spacing +85 c +25 c - 40 c 25 30 35 40 45 8 9 10 11 12 13 14 15 16 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone vs. frequency t=25 c, 1 mhz spacing 2110 mhz 2140 mhz 2170 mhz 25 30 35 40 45 2.11 2.12 2.13 2.14 2.15 2.16 2.17 oip3 (dbm) frequency (ghz) oip3 vs. frequency t=25 c, 1 mhz spacing, 10 dbm/tone 0 5 10 15 20 25 8 10 12 14 16 18 20 collector efficiency (%) output power (dbm) efficiency vs output average power vs. frequency t=25 c 2110 mhz 2140 mhz 2170 mhz
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 12 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com 2300? C ?2400 mhz reference design typical o - fdma performance at 25?c notes: 1. the p rimary rf microstrip line is 50 ? . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 ? jumpers can be replaced with copper trace in target application. 4. the edge of c9 is placed at 245 mils from ah128 rfout pin (31.9 o at 2350 mhz). 5. the edge of r1 is placed at 100 mils from ah128 rfin pin (13.0 o at 2350 mhz). 6. the edge of c10 is placed 80 mils from the edge of r1 (10.4 o at 2350 mhz). frequency (mhz) 2300 2350 2400 units gain 16.0 16.0 15.8 db input return loss 15 27 19 db output return loss 10.4 9.5 8.8 db aclr (pout=+15 dbm) - 49 - 49.3 - 49.5 % evm (pout=+15 dbm) 1.26 1.2 1.13 output p1db +25 +25 +25 dbm output ip3 (pout=+1 0 dbm/tone, f= 1mhz) +40.0 +40.3 +40.0 dbm performance plots - 2300? C ?2400 ?mhz reference design test conditions unless otherwise noted: v cc =+5?v, i cq = 115 ? ma , temp=+25?c, 50? system 802.16 - 2004 o - fdma, 64qam - 1/2, 1024 - fft, 20 symbols and 30 subchannels, 5 mhz carrier bw 13 14 15 16 17 18 2250 2300 2350 2400 2450 gain (db) frequency (mhz) gain vs. frequency t=25 c - 30 - 25 - 20 - 15 - 10 - 5 0 2250 2300 2350 2400 2450 return loss (db) frequency (mhz) return loss vs. frequency t=25 c s11 s22 - 65 - 60 - 55 - 50 - 45 8 9 10 11 12 13 14 15 16 aclr (dbc) output power (dbm) aclr vs. output average power t=25 c 2300 mhz 2350 mhz 2400 mhz w - cdma 3gpp test model 1+64 dpch par = 9.7 db @ 0.01% probability 3.84 mhz bw 0.0 0.5 1.0 1.5 2.0 8 9 10 11 12 13 14 15 16 evm (%) output power (dbm) evm vs. output average power t=25 c 2300 mhz 2350 mhz 2400 mhz 802.16 - 2004 o - fdma, 64qam - 1/2 1024 - fft, 20 symbols and 30 subchannels, 5 mhz carrier bw 25 30 35 40 45 6 8 10 12 14 16 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone t=25 c 2300 mhz 2350 mhz 2400 mhz
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 13 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com performance plots - 1.8? C ?2.7?ghz reference design test conditions unless otherwise noted: v cc =+5?v, i cq = 115 ? ma , temp=+25?c, 50? system 1.8? C ?2.7 g hz reference design typical performance at 25?c notes: 1. the p rimary rf microstrip line is 50 ? . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 ? jumpers can be replaced with copper trace in target application. 4. the left edge of c9 is placed at 2 10 mils from ah128 rfout pin ( 27.9 o at 2 400 mhz). 5. the right edge of r 3 is placed a djacent to the ah128 rfin pin. 6. the right edge of c10 is placed adjacent to the left edge of r 3. frequency (g hz) 1.8 2.1 2.4 2.7 units gain 14.2 13.4 12.6 11.2 db input return loss 7.1 7.0 6.0 4.8 db output return loss 11.7 16.5 14.1 8.9 db output p1db +25.4 +25.7 +25.3 +24.0 dbm output ip3 (pout=+1 1 dbm/tone, f= 1mhz) +45 +46 +46 +39 dbm 0 4 8 12 16 1800 2100 2400 2700 gain (db) frequency (mhz) gain vs. frequency t=25 c - 20 - 16 - 12 - 8 - 4 0 1800 2100 2400 2700 return loss (db) frequency (mhz) return loss vs. frequency t=25 c s11 s22 35 37 39 41 43 45 47 49 3 5 7 9 11 13 15 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone t=25 c, 1mhz tone spacing 1800mhz 2100mhz 2400 mhz 2700mhz 20 22 24 26 28 30 1700 1900 2100 2300 2500 2700 p1db (dbm) frequency (mhz) p1db vs. frequency t=25 c
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 14 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com 2.5? C ?2.7 g hz reference design typical o - fdma performance at 25?c notes: 1. the primary rf microstrip line is 50 ? . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 ? jumpers can be replaced with copper trace in target application. 4. the edge of c9 is placed at 230 mils from ah128 rfout pin. (32 o at 2.5 ghz) 5. the edge of r1 is placed at 100 mils from ah128 rfin pin. (14 o at 2.5 ghz) 6. the edge of c10 is placed 45 mils from the edge of r1. (6.2 o at 2.5 ghz) frequency (g hz) 2.5 2.6 2.7 units gain 14.7 15.1 14.9 db input return loss 7.1 13 13 db output return loss 15 10 8.1 db evm (pout=+17 dbm) 2.4 2.4 2.3 % output p1db +24.5 +24.8 +24.7 dbm output ip3 (pout=+8 dbm/tone, f= 1mhz) +41.1 +40.8 +41.5 dbm performance plots - 2.5? C ?2.7?ghz reference design test conditions unless otherwise noted: v cc =+5?v, i cq = 115 ? ma , temp=+25?c, 50? system 802.16 - 2004 o - fdma, 64qam - 1/2, 1024 - fft, 20 symbols and 30 subchannels, 5 mhz carrier bw c3 c4 c2 r2 r 4 l 1 r1 c1 c 9 c 1 0 c8 c8 c9 c10 12 13 14 15 16 17 2400 2500 2600 2700 2800 gain (db) frequency (mhz) gain vs. frequency t=25 c - 30 - 25 - 20 - 15 - 10 - 5 0 2.4 2.5 2.6 2.7 2.8 return loss (db) frequency (ghz) return loss vs. frequency t=25 c s11 s22 evm vs. output average power vs. frequency t=25c 0 1 2 3 4 5 8 10 12 14 16 18 output power (dbm) evm (%) 2.5 ghz 2.6 ghz 2.7 ghz aclr vs. output average power vs. frequency t=25c -60 -55 -50 -45 -40 -35 8 10 12 14 16 18 output power (dbm) aclr (dbc) 2.5 ghz 2.6 ghz 2.7 ghz w-cdma 3gpp test model 1+64 dpch par = 10.2 db @ 0.01% probability 3.84 mhz bw oip3 vs. output power/tone vs. frequency t=25c 30 35 40 45 50 6 8 10 12 14 16 18 20 output power/tone (dbm) oip3 (dbm) 2.5 ghz 2.6 ghz 2.7 ghz efficiency vs output average power vs. frequency t=25c 0 5 10 15 20 8 10 12 14 16 18 output power (dbm) collector efficiency (%) 2.5 ghz 2.6 ghz 2.7 ghz
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 15 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com pin configuration and description pin no. label description 1 rf in rf input. external dc block required. requires conjugate match for optimal performance. 2, backside paddle gnd rf/dc ground. use recommended via pattern to minimize inductance and thermal resistance. see pcb mounting pattern for suggested footprint. 3 rf out?/? cc rf o utput, matched to 50 ohms. external dc block and bias voltage required. evaluation board pcb information triquint pcb 455860 material and stack - up 50 ohm lines: width=28 mils spacing=28 mils 1 o z . c u b o t t o m l a y e r n e l c o n - 4 0 0 0 - 1 3 c o r e n e l c o n - 4 0 0 0 - 1 3 1 o z . c u t o p l a y e r 1 o z . c u i n n e r l a y e r 1 o z . c u i n n e r l a y e r 0 . 0 6 2 " 0 . 0 0 6 " f i n i s h e d b o a r d t h i c k n e s s 0 . 0 1 4 " 0 . 0 1 4 " r f i n g n d r f o u t / v c c 1 2 3 b a c k s i d e p a d d l e - g n d
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 16 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com pcb mounting pattern n otes : 1. all dimensions are in millimeters. angles are in degrees. 2. use 1 oz. copper minimum for top and bottom layer metal. 3. vias are required under the backside paddle of this device for proper rf/dc grounding and thermal dissipation. 4. do not remove or minimize via hole structure in the pcb. thermal and rf grounding i s critical. 5. we recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25 mm (0.10). 6. ensure good package backside paddle solder attach for reliable operation and best electrical performance. package marking and dimensions marking: part identifier C C n otes : 1. all dimensions are in millimeters. angles are in degrees. 2. dimension and tolerance formats conform to asme y14.4m - 1994. 3. the terminal #1 identifier and terminal numbering conform to jesd 95 - 1 spp - 012. 4. contact plating: nipdau yxxx - z ah128g 3.86 [0.152] 0.64 [0.025] 2x 0.86 [0.034] 0.76 [0.030] 0.63 [0.025] ?.254 (.010) plated thru via holes 1.26 [0.050] 2x 1.27 [0.050] 0.86 [0.034] 2x 0.58 [0.023] 4.50 [0.177] 2.65 [0.104] package outline 3.86 [0.152] 29x 3
ah128 ? ? w hi gh linearity ingap hbt amplifier datasheet: rev . b 02 - 25 - 16 - 17 of 17 - disclaimer: subject to change without notice ? 2015 triquint semiconductor, inc www.triquint.com / www.qorvo.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: class 2 value: ? jedec standard js - 001 - 2012 esd rating: class c3 value: passes 2000v min solderability c ompatible with both lead - free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. package lead plating: nipdau rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? ? ? ? 15 h 12 br 4 0 2 ) free ? ? msl rating msl rating: 3 test: +260 c convection reflow standard: jedec standard ipc/jedec j - std - 020 contact information for the latest specifications, additional product information, worldwide sales and distribution locations: web: www.triquint.com tel: 877 - 800 - 8584 email: customer.support@qorvo.com for information about the merger of rfmd and triquint as qorvo: web: www.qorvo.com for technical questions and application information: email: sjcapplications.engineering@qorvo.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change witho ut notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent r ights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving , or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

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